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| CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2004.04.02 Page No. : 1/4 BTC4505A3 Features * High breakdown voltage. (BVCEO = 400V) * Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA. * Complementary to BTA1759A3 Symbol BTC4505A3 Outline TO-92 BBase CCollector EEmitter EBC Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 625 150 -55~+150 Unit V V V mA mW C C BTC4505A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 100 Typ. 0.1 20 7 Max. 10 20 10 0.5 1.5 270 Unit V V V A nA A V V MHz pF Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2004.04.02 Page No. : 2/4 Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=400V, IE=0 VCE=300V, REB=4k VEB=6V,IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=10MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% BTC4505A3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 HFE@VCE=10V Current Gain---HFE 10000 Saturation Voltage-(mV) Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2004.04.02 Page No. : 3/4 Saturation Voltage vs Collector Current VCESAT@IC=10IB 1000 100 100 10 0.1 1 10 100 1000 Collector Current ---IC(mA) 10 0.1 1 10 100 1000 Collector Current ---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage-(mV) VBESAT@IC=10IB Power Dissipation---PD(mW) 700 600 500 400 300 200 100 0 Power Derating Curve 1000 100 0.1 1 10 100 1000 Collector Current--- IC(mA) 0 50 100 150 200 Ambient Temperature---TA() BTC4505A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension Spec. No. : C210A3-R Issued Date : 2003.10.15 Revised Date :2004.04.02 Page No. : 4/4 Marking: A B 1 2 3 2 C4505 3 C D H I E F G 1 Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4505A3 CYStek Product Specification |
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